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| CLT250 NPN Silicon Phototransistor PRELIMINARY (R) Clairex June, 2006 Technologies, Inc. 0.007 (0.18) 0.003 (0.08) EMITTER 0.090 (2.29) 0.080 (2.03) 0.024 (0.61) 0.016 (0.41) 0.062 (1.57) 0.057 (1.45) 0.093 (2.36) 0.083 (2.11) 0.125 (3.18) 0.102 (2.59) COLLECTOR ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) features * * * * * 18 acceptance angle Miniature hermetic package High sensitivity Spectrally matched to the CLE250 RoHS compliant absolute maximum ratings (TA = 25C unless otherwise stated) storage temperature ....................................................................... -65C to +150C operating temperature .................................................................... -65C to +125C lead soldering temperature(1) .......................................................................... 260C collector-emitter voltage...................................................................................... 30V emitter-collector voltage........................................................................................ 5V (2) continuous power dissipation ..................................................................... 125mW 1. 2. 5 seconds maximum. Derate linearly 1.0mW/C from 25C free air temperature to TA = +125C. description The CLT250 is an NPN silicon phototransistor mounted in a hermetically sealed package with a glass lens. This package is ideally suited for mounting into double-sided PC boards and is capable of reliable operation over a wide temperature range. notes: electrical characteristics (at TA = 25C unless otherwise noted) symbol IL parameter min typ max units test conditions Light current(3) 7.0 mA VCE = 5V, H = 20mW/cm2 ICEO Collector dark current 100 nA VCE = 10V, H = 0 V(BR)CEO Collector-emitter breakdown voltage 30 V VCE = 10V, IC = 100A V(BR)ECO Emitter-Collector breakdown voltage 5.0 V VCE = 10V, IE = 100A VCE(SAT) Collector-emitter saturation voltage 0.4 V IC = 1mA, H = 20mW/cm2 Total angle at half sensitivity points 36 deg. HP tr, tf Radiation rise and fall time 15 s VCE = 5V, IC = 1mA, RL = 1K notes: 3. The radiation source is a tungsten lamp operating at a color temperature of 2854K. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Revised 4/22/06 Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Plano, Texas 75074-8524 www.clairex.com |
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